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| SPI10N10L SPP10N10L SIPMOS Power-Transistor Feature N-Channel Enhancement mode Logic Level 175C operating temperature Avalanche rated dv/dt rated Product Summary VDS RDS(on) ID PG-TO262-3-1 100 154 10.3 V m A PG-TO220-3-1 Type SPP10N10L SPI10N10L Package PG-TO220-3-1 PG-TO262-3-1 Ordering Code Q67042-S4163 Q67042-S4162 Marking 10N10L 10N10L Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value 10.3 8.1 Unit A Pulsed drain current TC=25C ID puls EAS dv/dt VGS Ptot Tj , Tstg 42.2 60 6 20 50 -55... +175 55/175/56 mJ kV/s V W C Avalanche energy, single pulse ID =10.3 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =10.3A, VDS =80V, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 2.1 Page 1 2005-02-14 SPI10N10L SPP10N10L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. max. 3 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 100 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID = 21 A Zero gate voltage drain current VDS =100V, VGS =0V, Tj =25C VDS =100V, VGS =0V, Tj =125C A 0.01 1 1 169 124 1 100 100 210 154 nA m Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=8.1A Drain-source on-state resistance VGS =10V, ID =8.1A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.1 Page 2 2005-02-14 SPI10N10L SPP10N10L Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics ID =8.1A Symbol Conditions min. Values typ. 9.4 355 72 42 4.6 19.1 27.8 17.8 max. 444 90 63 6.9 28.7 41.7 26.7 Unit Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf VGS =0V, VDS =25V, f=1MHz VDD =50V, VGS=10V, ID =10.3A, RG =13 Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =10.3A VR =50V, IF =lS , diF /dt=100A/s Qgs Qgd Qg VDD =80V, ID =10.3A VDD =80V, ID =10.3A, VGS =0 to 10V V(plateau) VDD =80V, ID=10.3A IS TC=25C Rev. 2.1 Page 3 Transconductance gfs VDS 2*ID *RDS(on)max , 4.7 - S pF ns - 1.1 7.3 17.7 3.8 1.4 11 22 - nC V - 0.93 57 126 10.3 42.2 1.25 71 158 A V ns nC 2005-02-14 SPI10N10L SPP10N10L 1 Power dissipation Ptot = f (TC ) 55 SPP10N10L 2 Drain current ID = f (TC ) parameter: VGS 10 V 12 SPP10N10L W 45 40 A 10 9 8 Ptot ID 35 30 7 6 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 C 190 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 C 190 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C 10 2 SPP10N10L tp = 4.8s 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP10N10L K/W A /I D on ) = V DS 10 s 10 0 ID R DS ( 10 1 Z thJC 10 -1 100 s 10 10 0 1 ms -2 10 ms single pulse 10 -3 DC 10 -1 0 10 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 VDS Rev. 2.1 Page 4 TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2005-02-14 SPI10N10L SPP10N10L 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s 25 5.5V 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 500 m 5V A 6V 7V 10V 400 RDS(on) 4.7V 4.5V 350 300 250 4.5V 4.7V 5V ID 15 10 200 150 5 100 50 5.5V 6V 7V 10V 2.5 5 7.5 10 12.5 15 17.5 20 0 0 2 4 6 8 10 V 14 0 0 A 25 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 16 8 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 10 A 12 7 ID 10 g fs 8 6 4 2 2 1 0 0 0 0 1 Rev. 2.1 S 8 6 5 4 3 2 3 V 5 2 4 6 8 A 11 VGS Page 5 ID 2005-02-14 SPI10N10L SPP10N10L 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 8.1 A, VGS = 10 V 700 SPP10N10L 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.4 600 550 RDS(on) 500 450 400 350 300 250 200 150 100 50 0 -60 -20 20 60 100 140 C VGS(th) 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 3 pF 10 2 C Crss 10 1 10 0 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 0 0 5 10 15 20 IF Rev. 2.1 98% typ 200 V ID=1mA 2 1.8 1.6 1.4 1.2 ID=21A 1 0.8 -60 -20 20 60 100 C 180 Tj Tj 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 2 SPP10N10L Ciss A Coss 10 1 V VDS 30 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2005-02-14 SPI10N10L SPP10N10L 13 Typ. avalanche energy EAS = f (Tj ) 60 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 10.3 A pulsed 16 V SPP10N10L mJ 50 45 12 EAS VGS 40 35 30 25 20 15 10 2 5 0 25 45 65 85 105 125 145 4 C 185 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 120 SPP10N10L V V (BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 C 200 Tj Page 7 par.: ID = 10.3 A , VDD = 25 V, RGS = 25 10 20V 8 50V 80V 6 0 0 4 8 12 16 20 nC 28 QGate 2005-02-14 SPI10N10L SPP10N10L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 8 2005-02-14 |
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